symbol max q 2 unit s v ds v v gs v i dm t j , t stg c symbol v ds i fm t j , t stg junction and storage temperature range power dissipation a w 1.28 -55 to 150 c 2 t a =70c pulsed diode forward current b continuous forward current a p d i f t a =25c t a =70c units 30 v t a =25c parameter reverse voltage a 2.2 20 3 maximum schottky max q1 30 12 9.3 t a =25c t a =70c power dissipation p d pulsed drain current b continuous drain current a i d a 6.7 40 30 8.5 7.4 w -55 to 150 -55 to 150 junction and storage temperature range 2 1.28 1.28 t a =25c t a =70c 2 gate-source voltage 20 30 absolute maximum ratings t a =25c unless otherwise noted parameter drain-source voltage AO4918A asymmetric dual n-channel enhancement mode field effect transistor features q1 q2 v ds (v) = 30v v ds (v) = 30v i d = 9.3a i d =8.5a r ds(on) < 14.5m ? <18m ? (v gs = 10v) r ds(on) < 16m ? <27m ? (v gs = 4.5v) schottky v ds (v) = 30v, i f = 3a, v f <0.5v@1a general description the AO4918A uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc- dc converters. a schottky diode is co-packaged in parallel with the synchronous mosfet to boost efficiency further. AO4918A is pb-free (meets rohs & sony 259 specifications). AO4918Al is a green product ordering option. AO4918A and AO4918Al are electrically identical. soic-8 g1 s1/a d2 d2 d1/s2/k d1 / s2 /k d1/s2/k g2 1 2 3 4 8 7 6 5 g1 d1 s1 k a g2 d2 s2 q1 q2 alpha & omega semiconductor, ltd.
AO4918A symbol units r jl symbol units r jl r jl this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 81.9 110 maximum junction-to-lead c steady-state 30.5 40 max c/w c/w parameter: thermal characteristics mosfet q2 typ max maximum junction-to-ambient a t 10s r ja 53 40 thermal characteristics schottky 62.5 40 53 81.9 62.5 c/w maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state 30.5 typ maximum junction-to-ambient a steady-state parameter: thermal characteristics mosfet q1 maximum junction-to-ambient a t 10s 50.4 r ja 62.5 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 110 110 maximum junction-to-lead c steady-state 86 26.6 a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for eac h chip separately. rev 0 : aug 2005 alpha omega semiconductor, ltd.
AO4918A symbol min typ max units bv dss 30 v 0.007 0.05 3.2 10 12 20 i gss 100 na v gs(th) 0.6 1.1 2 v i d(on) 40 a 11.7 14.5 t j =125c 15.4 19 13.1 16 m ? ? q g 30.5 37 nc q gs 4.5 nc q gd 8.5 nc t d(on) 69ns t r 8.2 12 ns t d(off) 54.5 75 ns t f 10.5 15 ns t rr body diode + schottky reverse recovery time i f =9.3a, di/dt=100a/ s 23.5 28 ns q rr body diode + schottky reverse recovery charge i f =9.3a, di/dt=100a/ s 13.3 16 nc 8.5 30 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. q1 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current. (set by schottky leakage) v r =30v ma gate-body leakage current v ds =0v, v gs = 12v v r =30v, t j =125c v r =30v, t j =150c m ? v gs =4.5v, i d =8.8a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v gs =0v, v ds =15v, f=1mhz output capacitance (fet + schottky) reverse transfer capacitance r ds(on) static drain-source on-resistance v gs =10v, i d =9.3a switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =9.3a diode+schottky forward voltage i s =1a maximum body-diode+schottky continuous current dynamic parameters input capacitance turn-on delaytime v gs =10v, v ds =15v, r l =1.6 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time v gs =10v, v ds =15v, i d =9.3a total gate charge gate source charge gate drain charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the schottky appears in parallel with the mosfet body diode, even though it is a separate chip. therefore, we provide the ne t forward drop, capacitance and recovery characteristics of the mosfet and schottky. however, the thermal resistance is specified for each chip separately. rev 0 : aug 2005 alpha omega semiconductor, ltd.
AO4918A q1 typical electrical and thermal characteristic s 8.5 30 0 10 20 30 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 4.5v 10v 2.5v 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 11 12 13 14 15 16 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note f) i s (a) 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 5 10 15 20 25 30 0246810 v gs (volts) figure 5: on resistance vs. gate-source voltage r ds(on) (m ? ) v ds =5v v gs =4.5v v gs =10v i d =9.3a 25c i d =9.3a 125c 25c 25c 125c alpha omega semiconductor, ltd.
AO4918A q1 typical electrical and thermal characteristic s 8.5 30 0 1 2 3 4 5 0 5 10 15 20 25 30 35 q g (nc) figure 7: gate-charge characteristics v gs (volts) 100 1000 10000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0 .1 s 1s 10s dc r ds(on) limited 10 s v ds =15v i d =9.3a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v t j ( max ) =150c, t a =25c alpha omega semiconductor, ltd.
AO4918A symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.7 3 v i d(on) 30 a 14.6 18 t j =125c 22 27 20.6 27 m ? ? q g (10v) 17 24 nc q g 912nc q gs 3.4 nc q gd 4.7 nc t d(on) 5 6.5 ns t r 6 7.5 ns t d(off) 19 25 ns t f 4.5 6 ns t rr body diode reverse recovery time i f =8.5a, di/dt=100a/ q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs = 20v gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =8.5a m ? v gs =4.5v, i d =6a maximum body continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance turn-on rise time turn-off delaytime turn-off fall time reverse transfer capacitance switching parameters total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? v gs =10v, v ds =15v, i d =8.5a total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =8.5a diode voltage i s =1a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 0 : aug 2005 alpha & omega semiconductor, ltd.
AO4918A typical electrical and thermal characteristics 13.4 16 22 26 0.76 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 24 28 32 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 24 26 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a alpha & omega semiconductor, ltd.
AO4918A typical electrical and thermal characteristic s 13.4 16 22 26 0.76 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (a) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0 .1 s 1 s 10s d c r ds(on) limited 10 s alpha & omega semiconductor, ltd.
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